Parameter Definitions for ESD Devices
Operation Voltage (V DC )
Defined as DC voltage, under which device is in OFF state and leakage current below certain threshold.
Leakage Current (I L )
Current through device under Operation Voltage V DC .
Trigger Voltage (V T )
Voltage at which the device switches from the OFF to the ON state, during the IEC waveform or the TLP system.
Clamping Voltage (V C )
Voltage cross device under 8 kV per IEC or measured by TLP system. Typically measured 30 ns after initiation of the ESD pulse
(for TLP, both 30ns and 60ns are sometimes used).
Capacitance (C P )
Capacitance of the device measured at 1 MHz with 0V and max operating voltage bias.
Part Numbering System for ESD Devices
PESD xxxx Q - 240
Operating Voltage Designator 24 x 10? = 24V DC
Array of 4 Elements
EIA Size
9
Series
Warning :
Application Limitations for PESD0402-140, PESD0603-240 and PESD1206Q-240: These parts are not intended to be used under power
bus applications. Users should independently evaluate the suitability of and test each product selected for their own application.
All information, including illustrations, is believed to be accurate and reliable. Users, however, should independently evaluate the suitability of
and test each product selected for their application. Tyco Electronics Corporation and/or its Affiliates in the TE Connectivity Ltd. family of
companies (“TE”) makes no warranties as to the accuracy or completeness of the information, and disclaims any liability regarding its use. TE’s
only obligations are those in the TE Standard Terms and Conditions of Sale and in no case will TE be liable for any incidental, indirect, or
consequential damages arising from the sale, resale, use, or misuse of its products. Specifications are subject to change without notice. In
addition, TE Connectivity reserves the right to make changes to materials or processing that do not affect compliance with any applicable
specification without notification to Buyer. Without expressed or written consent by an officer of TE, TE does not authorize the use of any of its
products as components in nuclear facility applications, aerospace, or in critical life support devices or systems.
62
RoHS Compliant, ELV Compliant
HF Halogen Free
相关PDF资料
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相关代理商/技术参数
PESD1206Q-140 功能描述:ESD 抑制器 Surface Mount 1206 14V RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C
PESD1206Q-240 功能描述:ESD 抑制器 SMT 1206 PKG 24VDC PESD PROTECTOR RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C
PESD12S1UA,115 制造商:NXP Semiconductors 功能描述:ESD PROTECTION DIODE,SOD323 - Tape and Reel
PESD12VL1BA 制造商:NXP Semiconductors 功能描述:DIODE TVS SOD-323 制造商:NXP Semiconductors 功能描述:DIODE, TVS, SOD-323
PESD12VL1BA T/R 制造商:NXP Semiconductors 功能描述:ESD Suppressor TVS 30KV 2-Pin SOD-323 T/R
PESD12VL1BA,115 功能描述:TVS 二极管 - 瞬态电压抑制器 12V BIDIRECTIONL ESD RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
PESD12VL1BA115 制造商:NXP Semiconductors 功能描述:DIODE TVS REEL 3K 制造商:NXP Semiconductors 功能描述:ESD DIODE 37V Bidirectional SOD-323
PESD12VL2BT 制造商:NXP Semiconductors 功能描述:DIODE TVS 0.05UA 12V SOT-23 制造商:NXP Semiconductors 功能描述:DIODE, TVS, 0.05UA, 12V, SOT-23 制造商:NXP Semiconductors 功能描述:DIODE, TVS, 0.05UA, 12V, SOT-23, Diode Type:Bidirectional TVS, Clamping Voltage